PSII3X10 Datasheet, PDF (2/5 Pages) Powersem GmbH – IGBT Module

PSII 3x10/06
Diodes
Symbol
I_F25
I_F80
Conditions
T_C = 25°C
T_C = 80°C
Maximum Ratings
21
A
14
A
Symbol
Conditions
Characteristic Values
min. typ. max.
V_F
I_F = 10 A; T_VJ = 25°C
T_VJ = 150°C
I_RM
I_F = 10 A; di_F/dt = -400 A/µs; T_VJ = 125°C
t_rr
V_R = 300 V; V_GE = 0 V
R_thJC
R_thJH
with heatsink compound (0.42 K/m.K; 50 µm)
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
1.9 2.7 V
1.4
V
11
A
80
ns
3.5 K/W
7.0
K/W
Package style and outline
Dimensions in mm (1mm = 0.0394“)
H
N
5/H
K
8/N
5/A
6/7
8/G
1/H
4/N
1/A
2/3
4/G
A
G
Component
Symbol
T_VJ
T_stg
V_ISOL
M_d
a
Conditions
I_ISOL ≤ 1 mA; 50/60 Hz; t = 1 s
Mounting torque (M4)
Max. allowable acceleration
Maximum Ratings
-40...+150
-40...+125
3600
1.5 - 1.8
14 - 16
50
°C
°C
V~
Nm
lb.in.
m/s²
Symbol
d_S
d_A
Weight
Conditions
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
Characteristic Values
min. typ. max.
11.2
mm
11.2
mm
18
g
Temperature Sensor NTC
Symbol
R₂₅
B_25/50
Conditions
T= 25°C
Characteristic Values
min. typ. max.
455 470
3474
485 kΩ
K
POWERSEM GmbH, Walpersdorfer Str. 53
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20