PSII75-12 Datasheet, PDF (4/4 Pages) Powersem GmbH – IGBT Module

24
mJ
E_on ¹⁸
t_d(on)
120
ns
90
t
12
mJ
10
E_{off 8}
600
E_off
t_d(off)
ns
500
400 ^t
12
60
6
t_r
V_CE = 600 V
V_GE = ±15 V
4
6
R_G = 22 Ω
30
V_CE = 600 V
V_GE = ±15 V
300
R_G = 22 Ω
T_J = 125°C
200
E_on
T_J = 125°C
0
0 ^81T120
0
20
40
60
80 100 A
sheet ^IC
Fig. 7 Typ. turn on energy and switching
ata ^{er 20}
mJ
V_CE = 600 V
V_GE = ±15 V
tentative ^{dstill und Eon 15}
I_C = 50 A
T_J = 125°C
10
uct ^{ent 5}
t_d(on)
E_on
t_r
240
ns
180
t
120
60
m ₀
0 ^81T120
p 0 10 20 30 40 50 60 70 80 90 100 Ω
prod _evelo ^RG
Fig. 9 Typ. turn on energy and switching
d ¹²⁰
2
t_f ¹⁰⁰
0
0 ^81T120
0
20
40
60
80 100 A
I_C
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
10
mJ
8
E_off
6
V_CE = 600 V
V_GE = ±15 V
I_C = 50 A
T_J = 125°C
t_d(off)
E_off
1500
ns
1200
t
900
4
600
2
300
0
t _{81T120 f}
0
0 10 20 30 40 50 60 70 80 90 100 Ω
R_G
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
1
A
100
K/W
0,1
I_{CM 80}
60
40
R_G = 22 Ω
T_J = 125°C
V_CEK < V_CES
Z_thJC
0,01
0,001
diode
IGBT
20
0,0001
single pulse
0
81T120
0 200 400 600 800 1000 1200 V
V_CE
Fig. 11 Reverse biased safe operating area
0,00001
0,00001 0,0001 0,001
0,01
VID...75-12P1
0,1 s 1
t
Fig. 12 Typ. transient thermal impedance
RBSOA
POWERSEM GmbH, Walpersdorfer Str. 53
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20