PSII75-12 Datasheet, PDF (3/4 Pages) Powersem GmbH – IGBT Module

120
A
100
I_C
80
T_J = 25°C
60
V_GE =17 V
15 V
13 V
11 V
120
A
100
I_C
80
T_J = 125°C
60
V_GE =17 V
15 V
13 V
11 V
40
40
9V
9V
20
20
0
81T120
0,0 0,5 1,0 1,5 2,0 2,5 3,0 V
V_CE
sheet ^{Fig. 1 Typ. output characteristics}
120
A
ata ^{er 100}
V_CE = 20 V
T_J = 25°C
tentative ^{dstill und IC 80}
60
40
uct ^{ent 20}
0
81T120
m 5 6 7 8 9 10 11 V
p ^VGE
prod _evelo ^{Fig. 3 Typ. transfer characteristics}
20
d ^V
0
81T120
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 V
V_CE
Fig. 2 Typ. output characteristics
180
1A50
I_{F 120}
T_J = 125°C
T_J = 25°C
90
60
30
0
DWLP55-12
0,5 1,0 1,5 2,0 2,5 3,0 V 3,5
V_F
Fig. 4 Typ. forward characteristics of
free wheeling diode
120
300
A
ns
V_GE ¹⁵
V_CE = 600 V
I_RM
t_rr
80
t_rr
200
I_C = 50 A
10
5
40
I_RM
T_J = 125°C
V_R = 600 V
I_F = 50 A
100
0
81T120
0
50 100 150 200 250 nC
Q_G
0
0 ^81T120
0
200 400 600 8A00/µs 1000
-di/dt
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
POWERSEM GmbH, Walpersdorfer Str. 53
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20