PSII100-12 Datasheet, PDF (4/4 Pages) Powersem GmbH – IGBT Module

40
mJ
E_on ³⁰
160
E_on
t_d(on)
ns
120
t
20
mJ
E_off ¹⁵
E_off
t_d(off)
800
ns
600
t
20
t_r
80
10
400
V_CE = 600V
V_CE = 600V
V_GE = ±15V
10
V_GE = ±15V ₄₀
5
R_G = 15Ω ₂₀₀
R_G = 15Ω
T_J = 125°C
0
0
sheet ^{Fig. 7}
T_J = 125°C
0 ^121T120
50
100
150 A
I_C
Typ. turn on energy and switching
times versus collector current
25
mJ
ata ^{er 20}
E_on
tentative ^{dstill und 15}
V_CE = 600V
V_GE = ±15V
I_C = 75A
T_J = 125°C
10
t_d(on)
E_on
200
ns
160
t
120
t_r
80
uct ^{ent 5}
40
0
m 0 8
prod _evelop ^Fig.9
0 ^121T120
16 24 32 40 48 Ω 56
R_G
Typ. turn on energy and switching
times versus gate resistor
200
d ^A
0
0
Fig. 8
t _{121T120 f}
0
50
100
150 A
I_C
Typ. turn off energy and switching
times versus collector current
25
mJ
20
E_off
15
V_CE = 600V
V_GE = ±15V
I_C = 75A
T_J = 125°C
10
t_d(off)
E_off
2000
ns
1600
t
1200
800
5
400
121T120
0
t_f
0
0 8 16 24 32 40 48 Ω 56
R_G
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
160
0,1
I_CM
120
Z_thJC
0,01
diode
IGBT
R_G = 15Ω
80
T_J = 125°C
V_CEK < V_CES
0,001
40
0,0001
single pulse
0
121T120
0 200 400 600 800 1000 1200 V
V_CE
Fig. 11 Reverse biased safe operating area
RBSOA
0,00001
0,00001 0,0001 0,001
0,01
VID...125-12P1
0,1 s 1
t
Fig. 12 Typ. transient thermal impedance
POWERSEM GmbH, Walpersdorfer Str. 53
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20