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PSII100-12 Datasheet, PDF (3/4 Pages) Powersem GmbH – IGBT Module
175
TJ = 25°C
1A50
IC 125
100
VGE=17V
15V
13V
11V
175
TJ = 125°C
15A0
IC 125
100
VGE=17V
15V
13V
11V
75
75
50
9V
50
9V
25
25
0
121T120
0,0 0,5 1,0 1,5 2,0 2,5 3,0 V
VCE
sheet Fig. 1 Typ. output characteristics
150
ata er VCE = 20V
1A25 TJ = 25°C
tentative dstill und IC 100
75
t 50
uct en 25
m 0
121T120
5 6 7 8 9 10 11 V
p VGE
prod evelo Fig. 3 Typ. transfer characteristics
d 20
0
121T120
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 V
VCE
Fig. 2 Typ. output characteristics
300
A
250
IF 200
TJ = 125°C
TJ = 25°C
150
100
50
0
121T120
0,5 1,0 1,5 2,0 2,5 3,0 V 3,5
VF
Fig. 4 Typ. forward characteristics of
free wheeling diode
120
300
V VCE = 600V
IC = 75A
A
ns
VGE 15
IRM
trr
80
trr
200
10
TJ = 125°C
40
VR = 600V
100
5
IRM
IF = 75A
0
121T120
0
100 200 300 400 nC
QG
Fig. 5 Typ. turn on gate charge
0
0 121T120
0
200 400 600 8A00/µs 1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
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 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20