PSHI5012 Datasheet, PDF (4/4 Pages) Powersem GmbH – IGBT Module

PSHI 50/12
15
mJ
E_{on 10}
V_CE = 600 V
V_GE = ±15 V
R_G = 47 Ω
T_VJ = 125°C
t_d(on)
5
t_r
150
ns
100 ^t
50
E_on
0
0 ^42T120
0
20
40 A 60
I_C
Fig. 7 Typ. turn on energy and switching
4
mJ
E_on
3
E_on
2
1
160
t_d(on)
ns
120 _t
t_r
80
V_CE = 600 V
V_GE = ±15 V
I_C = 25 A
40
T_VJ = 125°C
0
0 ^42T120
0
20
40
60
80 Ω 100
R_G
Fig. 9 Typ. turn on energy and switching
60
A
I_{CM 40}
R_G = 47 Ω
T_VJ = 125°C
20
0
42T120
0 200 400 600 800 1000 1200 1400 V
V_CE
Fig. 11 Reverse biased safe operating area
12
mJ
E_{off 8}
V_CE = 600V
V_GE = ±15V
R_G = 47Ω
T_VJ = 125°C
4
600
ns
t_d(off)
400 ^t
E_off
200
t_f
0
0 ^42T120
0
20
40
A
60
I_C
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
8
mJ
E_{off 6}
800
t_d(off)
ns
E_off ⁶⁰⁰ t
4
400
V_CE = 600 V
V_GE = ±15 V
2
I_C = 25 A
200
T_VJ = 125°C
t_f
0
0 ^42T120
0
20
40
60
80 Ω 100
R_G
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
1
Z_thJC
0,1
diode
IGBT
0,01
0,001
single pulse
0,0001
0,00001 0,0001 0,001 0,01
0,1
t
MDI...50-12P1
1 s 10
Fig. 12 Typ. transient thermal impedance
RBSOA
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20