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PSHI5012 Datasheet, PDF (1/4 Pages) Powersem GmbH – IGBT Module
IGBT Module
Preliminary Data Sheet
PSHI 50/12*
F10
A1
K10
K13
H13
ECO-PACTM 2
IC25
= 49 A
VCES = 1200 V
V = CE(sat)typ. 3.1 V
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
RthJC
RthJH
S18
N9
P18
NTC
PSHI 50/12*
*NTC optional
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
± 20
V
TC = 25°C
TC = 80°C
49
A
33
A
VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
50
A
RBSOA, Clamped inductive load; L = 100 µH
VCES
VCE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
non-repetitive
10
µs
TC = 25°C
208
W
Features
•
Package with DCB ceramic base plate
•
Isolation voltage 3000 V∼
•
Planar glass passivated chips
•
Low forward voltage drop
• Leads suitable for PC board
soldering
•
UL registered, E 148688
Applications
•
AC motor control
•
AC servo and robot drives
•
power supplies
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 1 mA; VGE = VCE
VCE = VCES;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 30 A
VGE = 15/0 V; RG = 47 Ω
3.1 3.7 V
3.5
V
4.5
6.5 V
1.1 mA
4.2 mA
180 nA
100
ns
70
ns
500
ns
70
ns
4.6
mJ
3.4
mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
1.65
nF
0.6 K/W
1.2
K/W
Advantages
•
Easy to mount with two screws
•
Space and weight savings
•
Improved temperature and power
cycling capability
•
High power density
•
Small and light weight
Caution: These Devices are sensitive
to electrostatic discharge. Users
should observe proper ESD handling
precautions.
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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