PSHI100-06 Datasheet, PDF (4/4 Pages) Powersem GmbH – IGBT Module H-Bridge Configuration

10,0
mJ
100
t_d(on)
ns
E_on ^7,5
75
t
t_r
5,0
50
V_CE = 300 V
V_GE = ±15 V
2,5
R_G = 22 Ω
25
T_VJ = 125°C
E_on
0,0
0
40
0 ^42T60
80
A ₁₂₀
I_C
Fig. 7 Typ. turn on energy and switching
4
mJ
E_on
3
2
t_d(on)
E_on
t_r
V_CE = 300 V
V_GE = ±15 V
I_C = 50 A
T_VJ = 125°C
80
ns
60 ^t
40
1
20 ^42T60
0
10 20 30 40 50 Ω 60
R_G
Fig. 9 Typ. turn on energy and switching
120
A
I_CM ⁹⁰
60
R_G = 22 Ω
T_VJ = 125°C
30
0
42T60
0 100 200 300 400 500 600 700 V
V_CE
Fig. 11 Reverse biased safe operating area
PSHI 100/06
4
400
mJ
E_off ³
2
1
E_off
t_d(off)
V_CE = 300 V
V_GE = ±15 V
R_G = 22 Ω
T_VJ = 125°C
ns
300
t
200
100
0
t_f
0 ^42T60
0
40
80
A 120
I_C
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
3
mJ
E_off
2
1
V_CE = 300 V
V_GE = ±15 V
I_C = 50 A
T_VJ = 125°C
600
E_off
t_d(off)
ns
400 ^t
200
0
t_f
0 ^42T60
0
10 20 30 40 50 Ω 60
R_G
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
1
Z_thJC
0,1
diode
IGBT
0,01
0,001
single pulse
0,0001
0,00001 0,0001 0,001 0,01
0,1
t
VID...75-06P1
1 s 10
Fig. 12 Typ. transient thermal impedance
RBSOA
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20