PSHI100-06 Datasheet, PDF (3/4 Pages) Powersem GmbH – IGBT Module H-Bridge Configuration

PSHI 100/06
150
12A0
I_C
90
60
30
V_GE= 17 V
15 V
13 V
11V
T_VJ = 25°C
9V
0
42T60
0
1
2
3
4
5V6
V_CE
Fig. 1 Typ. output characteristics
150
12A0
I_C
90
V_CE = 20 V
60
T_VJ = 125°C
T_VJ = 25°C
30
0
42T60
4
6
8
10 12 14 V 16
V_GE
Fig. 3 Typ. transfer characteristics
20
V
15
V_GE
10
V_CE = 300 V
I_C = 50 A
5
0
42T60
0
40
80
120 nC 160
Q_G
Fig. 5 Typ. turn on gate charge
150
I_C ^12A0
90
60
30
V_GE= 17 V
15 V
13 V
11V
T_VJ = 125°C
9V
0
42T60
0
1
2
3
4
5V 6
V_CE
Fig. 2 Typ. output characteristics
90
7A5
I_F
60
45
30
15
0
0,0
T_VJ = 125°C
T_VJ = 25°C
42T60
0,5
1,0
1,5 V 2,0
V_F
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
150
4A0
I_RM
t_rr
30
20
10
I_RM
0
0
200
T_VJ = 125°C
V_R = 300 V
I_F = 30 A
1_n2_s0 _trr
90
60
30
0 ^42T60
400 600 8A00/µs 1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
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 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
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