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QID1210006 Datasheet, PDF (7/7 Pages) Powerex Power Semiconductors – Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1210006
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
102
VCC = 600V
VGE = ±15V
IE = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
101
TBD
100
100
101
102
GATE RESISTANCE, RG, (Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10010-3
10-2
10-1
100
101
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.217°C/W
(IGBT)
Rth(j-c) =
0.368°C/W
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3
12/12 Rev. 2
7