QID1210006 Datasheet, PDF (6/7 Pages) Powerex Power Semiconductors – Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts

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QID1210006
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
GATE CHARGE VS. VGE
20
I_C = 100A
16
V_CC = 400V
12
V_CC = 600V
8
4
0
0 100 200 300 400 500 600 700
GATE CHARGE, Q_G, (nC)
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
10²
V_CC = 600V
V_GE = ±15V
I_C = 100A
T_j = 125°C
Inductive Load
C Snubber at Bus
10¹
E_SW(on)
E_SW(off)
TBD
10⁰
10⁰
10¹
10²
GATE RESISTANCE, R_G, (Ω)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
10¹
TBD
10⁰
10^-1
10¹
V_CC = 600V
V_GE = 15V
R_G = 3.1Ω
T_j = 125°C
Inductive Load
C Snubber at Bus
E_SW(on)
E_SW(off)
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
10²
TBD
10¹
10⁰
10¹
V_CC = 600V
V_GE = ±15V
R_G = 3.1Ω
T_j = 125°C
Inductive Load
C Snubber at Bus
10²
EMITTER CURRENT, I_E, (AMPERES)
10³
6
12/12 Rev. 2