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| BCR8PM Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
BCR8PM
Triac
8 Amperes/400-600 Volts
GATE TRIGGER CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
103
IRGT I, IRGT III
IFGT I,
102
GATE TRIGGER VOLTAGE
VS. JUNCTION TEMPERATURE
(TYPICAL)
103
102
LATCHING CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
103
DISTRIBUTION
102
TYPICAL EXAMPLE
101
101
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
BREAKOVER VOLTAGE
VS. JUNCTION TEMPERATURE
(TYPICAL)
160
140
120
100
80
60
40
20
0
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
COMMUTATION CHARACTERISTICS
(TYPICAL)
102
MINIMUM
CHARAC-
TERISTICS
VALUE
101
III QUADRANT
Tj = 125oC
IT = 4A
ⶠ= 500â®s
VD = 200v
f = 3Hz
I QUADRANT
100
VOLTAGE WAVEFORM
t
(dv/dt)c
VD
CURRENT WAVEFORM
IT
(di/dt)c
â¶
t
10-1
100
101
102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT, (A/ms)
103
101
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
(TYPICAL)
160
Tj = 125°C
140
I QUADRANT
III QUADRANT
120
100
80
60
40
20
0
101
102
103
104
RATE OF RISE OF OFF-STATE VOLTAGE, dv/dt, (V/â®s)
GATE TRIGGER CURRENT
VS. GATE CURRENT PULSE WIDTH
(TYPICAL)
103
102
Tj = 25°C
IFGT I
IRGT III
IRGT I
101
100
101
GATE CURRENT PULSE WIDTH, tw, (â®s)
102
100
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
REPETITIVE PEAK OFF-STATE CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
105
104
103
102
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6â
6â
A
A
6V
RG 6V
RG
V
V
TEST PROCEDURE I
TEST PROCEDURE II
6â
6V
A
RG
V
TEST PROCEDURE III
T-44
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