BCR8PM Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
BCR8PM
Triac
8 Amperes/400-600 Volts
Electrical and Thermal Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction-to-case
Voltage – Blocking State
Repetitive Off-state Current
Current – Conducting State
Peak On-state Voltage
Critical Rate-of-rise of Commutating
Off-state Voltage (Commutating dv/dt)
v for inductive load (L)
(Switching)
R_th(j-c)
I_DRM
V_TM
(dv/dt)_c
–
Gate Open Circuited,
V_D = V_DRM, T_j = 125°C
T_c = 25°C
I_TM = 12A
–
Min.
Typ. Max. Units
–
–
3.7 °C/W
–
–
2
mA
–
–
1.6 Volts
–
–
–
V/␮s
⌬ Part
Number
V_DRM
(Volts)
Commutating
dv/dt, (dv/dt)_c
(V/␮sec)
Load Type Minimum
Test Condition
Commutating Voltage &
Current Waveform
(Inductive Load)
BCR8PM-8L 400
BCR8PM-12L 600
L
10
T_j = 125°C,
SUPPLY
L
10
Rate of Decay
VOLTAGE
On-state
Commutating
Current
MAIN
CURRENT
(di/dt)_c = -4A/msec; MAIN
Peak Off-state
VOLTAGE
Voltage
(dv/dt)_C
V_D = 400V
t
(di/dt)_C
t
V_D
t
V_D
T-42