FGR3000FX-90DA Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
FGR3000FX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN ON SWITCHING ENERGY
(MAXIMUM)
3.5
VD = 3000V
IGM = 75A
diG/dt = 30A/µs
3.0 _{CS = 6.0µF}
RS = 5Ω
Tj = 125°C
2.5
diT/dt = 300A/µs
200A/µs
100A/µs
2.0
1.5
1.0
500 1100 1700 2300 2900 3500
ON STATE CURRENT (A)
OFF STATE RECOVERY CHARGE,
OFF STATE RECOVERY TIME
VS. JUNCTION TEMPERATURE
3
2
MAX.
10³
7
5
3
2
10²
7
5
3
2
10¹
7
5
3
0
IRM = 1500A
Qdr
AV. _{di/dt = 100A/µs}
Tj = 125°C
MAX.
tdr
AV.
20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
OFF STATE RECOVERY CHARGE,
OFF STATE RECOVERY TIME
VS. RATE OF DECREASE OF REVERSE CURRENT
5
IRM = 1500A
3
2
Tj = 125°C
MAX.
10³
7
AV.
5
3
Qdr
2
10²
7
5
tdr
3
MAX.
2
10¹
7
5
AV.
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
RATE OF DECREASE OF REVERSE CURRENT (A/µS)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
25
VD = 3000V
VDM = 4000V
diGQ/dt = –30A/µs
20
VRG = 17V
CS = 6.0µF
LS = 0.2µH
Tj = 125°C
15
10
5
500 1000 1500 2000 2500 3000
TURN OFF CURRENT (A)
OFF STATE RECOVERY CHARGE,
OFF STATE RECOVERY TIME
VS. REVERSE CURRENT
5
di/dt = 100A/µs
3
2
Tj = 125°C
MAX.
10³
7
AV.
5
3
Qdr
2
10²
7
5
3
2
tdr
MAX.
10¹
7
AV.
5
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
REVERSE CURRENT (A)
OFF STATE RECOVERY LOSS(DIODE PART)
VS. REVERSE CURRENT
(TYPICAL)
8
VRM = 3000V
7 CS = 6.0µF
Tj = 125°C
di/dt = 300A/µs
6
5
100A/µs
4
3
2
1
0
500 1100 1700 2300 2900 3500
REVERSE CURRENT (A)
Aug.1998