FGR3000FX-90DA Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
FGR3000FX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
8000
7000
6000
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
VD = 5~20V
IT = 25~200A
HALF SINE WAVE
5000
4000
3000
2000
1000
0
–60 –20 20
60 100 140
JUNCTION TEMPERATURE (°C)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF GATE CURRENT
(TYPICAL)
40
VD = 2250V
35
VDM = 3375V
diGQ/dt = –30A/µs
30
VRG = 17V
CS = 6.0µF
tgq
25
LS = 0.2µH
Tj = 125°C
20
ts
15
10
5
0
0 500 1000 1500 2000 2500 3000 3500 4000
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
800
VD = 2250V
VDM = 3375V
diGQ/dt = –30A/µs
700 _{VRG = 17V}
CS = 6.0µF
LS = 0.2µH
600 Tj = 125°C
500
400
300
500 1000 1500 2000 2500 3000
TURN OFF CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
8.0
IT = 3000A
7.0
VD = 3000V
diT/dt = 500A/µs
6.0
diG/dt = 30A/µs
Tj = 125°C
5.0
4.0
tgt
3.0
td
2.0
1.0
0
0 10 20 30 40 50 60 70 80 90 100
TURN ON GATE CURRENT (A)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
40
tgq
30
20 VD = 2250V
VDM = 3375V
ts
IT = 3000A
10 ^{VRG = 17V}
CS = 6.0µF
LS = 0.2µH
0 ^{Tj = 125°C}
10 20 30 40 50 60
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
900
VD = 2250V
850
VDM = 3375V
IT = 3000A
800
VRG = 17V
CS = 6.0µF
750
LS = 0.2µH
Tj = 125°C
700
650
600
550
500
10 20 30 40 50 60
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
Aug.1998