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| FGR3000CV-90DA Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE | |||
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MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
FGR3000CV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN ON SWITCHING ENERGY
(MAXIMUM)
3.0
VD = 2250V
IGM = 40A
2.5
diG/dt = 10A/µs
CS = 3.5µF
RS = 5â¦
Tj = 125°C
2.0
diT/dt = 300A/µs
200A/µs
1.5
100A/µs
1.0
0.5
500 1100 1700 2300 2900 3500
ON STATE CURRENT (A)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
16
VD = 2250V
14 VDM = 3375V
diGQ/dt = â40A/µs
12
VRG = 17V
LS = 0.2µH
10 Tj = 125°C
CS = 2.0µF
3.5µF
8
6
4
2
0
500 1000 1500 2000 2500 3000
TURN OFF CURRENT (A)
OFF STATE RECOVERY CHARGE,
OFF STATE RECOVERY TIME
VS. JUNCTION TEMPERATURE
3
2
MAX.
103
7
5
3
2
102
7
5
3
2
101
7
5
3
0
AV.
IRM = 1500A
di/dt = 100A/µs
Qdr
Tj = 125°C
MAX.
tdr
AV.
20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
OFF STATE RECOVERY CHARGE,
OFF STATE RECOVERY TIME
VS. REVERSE CURRENT
5
di/dt = 100A/µs
3
2
Tj = 125°C
MAX.
103
7
AV.
5
3
Qdr
2
102
7
5
3
2
tdr
MAX.
101
7
AV.
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
REVERSE CURRENT (A)
OFF STATE RECOVERY CHARGE,
OFF STATE RECOVERY TIME
VS. RATE OF DECREASE OF REVERSE CURRENT
5
IRM = 1500A
3
2
Tj = 125°C
MAX.
103
AV.
7
5
3
2
Qdr
102
7
5
tdr
3
2
MAX.
101
7
AV.
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF DECREASE OF REVERSE CURRENT (A /µS)
OFF STATE RECOVERY LOSS(DIODE PART)
VS. REVERSE CURRENT
(TYPICAL)
8
VRM = 2250V
7 CS = 3.5µF
Tj = 125°C
6
5
4
di/dt = 300A/µs
3
2
100A/µs
1
0
500 1100 1700 2300 2900 3500
REVERSE CURRENT (A)
Aug.1998
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