FGR3000CV-90DA Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
FGR3000CV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
VTM
VRM
IDRM
IRG
dv/dt
tgt
On-state voltage
Peak reverse voltage drop
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Tj = 125°C, ITM = 3000A, Instantaneous measurment
Tj = 125°C, IRM = 3000A, Instantaneous measurment
Tj = 125°C, VDRM Applied, VGK = –2V
Tj = 125°C, VRG = 17V
Tj = 125°C, VD = 2250V, VGK = –2V
Tj = 125°C, ITM = 3000A, IGM = 40A, VD = 2250V
tgq
IGQM
VGT
IGT
Rth(j-f)
Turn-off time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
Tj = 125°C, ITM = 3000A, VDM = 3375V, diGQ/dt = –40A/µs
VRG = 17V, CS = 3.5µF, LS = 0.2µH
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
GTO Side (Junction to fin)
Diode Side (Junction to fin)
Min
—
—
—
—
1000
—
—
—
—
—
—
Limits
Typ
—
—
—
—
—
—
—
750
—
—
—
Max
4.0
4.0
200
250
—
10
30
—
1.5
3000
0.016
0.025
Unit
V
V
mA
mA
V/µs
µs
µs
A
V
mA
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE AND MAXIMUM
REVERSE CHARACTERISTICS
10⁴
7 Tj = 125°C
5
3
2
10³
7
5
3
ON-STATE CHARACTERISTIC
2
(GTO PART)
10²
7
REVERSE CHARACTERISTIC
5
(DIODE PART)
3
2
10¹
012345678
VOLTAGE (V)
GATE CHARACTERISTICS
10²
7
5
3
2
VFGM = 10V
PFGM = 400W
10¹
7
5
PFG(AV) = 100W
3
VGT = 1.5V
2
10⁰
7
5
3
Tj = 25°C
2 ^{IGT = 3000mA}
IFGM = 100A
10^–1
10² 2 3 5 7 10³ 2 3 5 7 10⁴ 2 3 5 7 10⁵
GATE CURRENT (mA)
RATED ON-STATE AND REVERSE
SURGE CURRENT
25
20
DIODE PART
15
10
GTO PART
5
0
10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTICS
(JUNCTION TO FIN)
10⁰ 2 3 5 7 10¹
0.040
0.035
0.030
DIODE PART
0.025
0.020
GTO PART
0.015
0.010
DIODE PART
0.005
GTO PART
0
10^–3 2 3 5 710^–2 2 3 5 710^–1 2 3 5 7 10⁰
TIME (S)
Aug.1998