CM25MD-24H Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

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CM25MD-24H
CIB Module
Three Phase Converter + Three Phase Inverter + Brake
25 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
50
T_j = 25^oC
15
12
40 ^VGE ⁼
20V
11
30
20
10
10
9
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 50A
6
I_C = 25A
4
2
I_C = 10A
0
0
10³
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_f
t_d(off)
10²
t_d(on)
10¹
10⁰
V_CC = 600V
V_GE = ±15V
R_G = 13Ω
t_r
T_j = 125°C
10¹
COLLECTOR CURRENT, I_C, (AMPERES)
10²
TRANSFER CHARACTERISTICS
(TYPICAL)
50
V_CE = 10V
T_j = 25°C
40
T_j = 125°C
30
20
10
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10²
T_j = 25°C
10¹
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0
10 20
30
40 50
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10¹
C_ies
10⁰
C_oes
10⁰
1.0 1.5 2.0 2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10¹
di/dt = -50A/µsec
T_j = 25°C
I_rr
10²
t_rr
10⁰
V_GE = 0V
f = 1MHz
10^-1
10^-1
10⁰
C_res
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
16
V_CC = 400V
V_CC = 600V
12
8
10¹
10⁰
10¹
EMITTER CURRENT, I_E, (AMPERES)
10^-1
10²
4
0
0
50 100 150 200 250
GATE CHARGE, Q_G, (nC)
5