CM25MD-24H Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM25MD-24H
CIB Module
Three Phase Converter + Three Phase Inverter + Brake
25 Amperes/1200 Volts
Electrical and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
IGBT Inverter Sector
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate-Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Resistive
Turn-on Time
Load
Rise Time
Switching
Turn-off Time
Times
Fall Time
Emitter-Collector Voltage
Reverse Recovery Time
Reverse Recovery Charge
Thermal Resistance (Junction-to-Fin)
I_CES
V_GE(th)
I_GES
V_CE(sat)
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
V_EC
t_rr
Q_rr
R_th(j-f)
V_CE = V_CES, V_GE = 0V
V_CE = 10V, I_C = 2.5mA
V_GE = V_GES, V_CE = 0V
V_GE = 15V, I_C = 25A, T_j = 25°C
V_GE = 15V, I_C = 25A, T_j = 150°C
V_GE = 0V, V_CE = 10V
V_CC = 600V, I_C = 25A, V_GE = 15V
V_GE1 = V_GE2 = 15V,
V_CC = 600V, I_C = 25A,
R_g = 13Ω,
Resistive Load
I_E = 25A, V_GE = 0V
I_E = 25A, V_GE = 0V,
di_E/dt = -50A/µs
Per IGBT
Per FWDi
—
—
1
mA
4.5
6.0
7.5
Volts
—
—
0.5
µA
—
2.7
3.4
Volts
—
2.45
—
Volts
—
—
5.0
nF
—
—
3.8
nF
—
—
1.0
nF
—
125
—
nC
—
—
100
nS
—
—
200
nS
—
—
150
nS
—
—
350
nS
—
—
3.5
Volts
—
—
250
nS
—
0.22
—
µC
—
—
1.2
°C/W
—
—
1.9
°C/W
4