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| QJD1210007 Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Silicon Carbide MOSFET Module 100 Amperes/1200 Volts | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QJD1210007
Silicon Carbide MOSFET Module
100 Amperes/1200 Volts
Preliminary
FREE-WHEEL SCHOTTKY DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
200
Tj = 25°C
160
Tj = 75°C
Tj = 125°C
120
Tj = 175°C
80
40
0
0
1
2
3
4
5
FORWARD VOLTAGE, VF, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MOSFET)
10110-3
10-2
10-1
100
101
Single Pulse
TC = 25°C
100
Per Unit Base = Rth(j-c) = 0.17°C/W
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10110-3
10-2
10-1
100
101
Single Pulse
TC = 25°C
100
Per Unit Base = Rth(j-c) = 0.14°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
10-3
10-5
TIME, (s)
10-4
10-3
10-3
4
04/12 Rev. 6
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