QJD1210007 Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Silicon Carbide MOSFET Module 100 Amperes/1200 Volts

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QJD1210007
Silicon Carbide MOSFET Module
100 Amperes/1200 Volts
Preliminary
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Drain-Source Voltage (G-S Short)
Gate-Source Voltage
Drain Current (Continuous) at TC = 150°C
Drain Current (Pulsed)*
Maximum Power Dissipation (TC = 25°C, Tj < 175°C)
Junction Temperature
Storage Temperature
Mounting Torque, M6 Main Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
V Isolation Voltage
Symbol
VDSS
VGSS
ID
ID(pulse)
PD
Tj
Tstg
—
—
—
VRMS
QJD1210007
1200
-5 / +25
100
250
880
-40 to 200
-40 to 150
40
40
400
3000
Units
Volts
Volts
Amperes
Amperes
Watts
°C
°C
in-lb
in-lb
Grams
Volts
MOSFET Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current**
Zero Gate Voltage Drain Current**
Gate Leakage Current
Gate Threshold Voltage
Drain-Source On Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Body Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V(BR)DSS
ID = 50μA, VGS = 0
1200
—
—
Volts
IDSS
VGS = 0, VDS = 1200V
—
0.35
2.6
mA
IDSS
VGS = 0, VDS = 1200V, Tj = 175°C
—
0.40
4.0
mA
IGSS
VDS = 0, VGS = 20V
—
—
1.5
μA
VGS(th)
VDS = VGS, ID = 10mA
1.5
2.5
5.0
Volts
VDS = VGS, ID = 10mA, Tj = 175°C
1.0
1.7
5.0
Volts
RDS(on)
ID = 100A, VGS = 20V
—
15
25
mΩ
ID = 100A, VGS = 20V, Tj = 175°C
—
20
32
mΩ
Qgs
VDD = 800V, ID = 100A
—
140
—
nC
Qgd
VDD = 800V, ID = 100A
—
220
—
nC
QG
VCC = 800V, IC = 100A, VGS = -5/20V
—
500
—
nC
VSD
IF = 50A, VGS = -5V
—
4.0
—
Volts
Ciss
—
10.2
—
nF
Coss
VGS = 0, VDS = 800V, f = 1MHz
—
1.0
—
nF
Crss
—
0.1
—
nF
td(on)
VDD = 800V, ID = 100A,
—
—
TBD
ns
tr
VGS = 0/20V,
—
—
TBD
ns
td(off)
RG = 10Ω,
—
—
TBD
µs
tf
RL = 856µH
—
—
TBD
ns
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage.
2
04/12 Rev. 6