FX50KMJ-06 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
–10
Tch = 25°C
ID = –50A
–8
VDS =
–6
–10V
–20V
–40V
–4
–2
0
0
40 80 120 160 200
GATE CHARGE Qg (nC)
MITSUBISHI Pch POWER MOSFET
FX50KMJ-06
HIGH-SPEED SWITCHING USE
–100
–80
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
VGS = 0V
Pulse Test
TC =
125°C
75°C
–60
25°C
–40
–20
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7 ^{VGS = –10V}
ID = 1/2ID
5
4
Pulse Test
3
2
10⁰
7
5
4
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–4.0
VDS = –10V
ID = –1mA
–3.2
–2.4
–1.6
–0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
10¹
7
5 ^{D = 1.0}
3
0.5
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10⁰
0.2
7
5
0.1
3
2
0.05
PDM
10^–1
7
5
3
2
0.02
0.01
Single Pulse
tw
T
D= ^tw
T
10^–2
10^–42 3
5 710^–32 3
5 710^–22 3
5 710^–12 3
5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10²
PULSE WIDTH tw (s)
Jan.1999