FX50KMJ-06 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

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MITSUBISHI Pch POWER MOSFET
FX50KMJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –60V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –25A, VGS = –10V
ID = –25A, VGS = –4V
ID = –25A, VGS = –10V
ID = –25A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –30V, ID = –25A, VGS = –10V, RGEN = RGS = 50Ω
IS = –25A, VGS = 0V
Channel to case
IS = –50A, dis/dt = 100A/µs
Min.
–60
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
—
–1.8
15.0
23
–0.38
49
11610
1355
687
73
137
822
320
–1.0
—
70
Max.
—
±0.1
–0.1
–2.3
18.9
32
–0.47
—
—
—
—
—
—
—
—
–1.5
3.57
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
–3
–2
–10²
–7
–5
tw =
10µs
100µs
–3
–2
1ms
–10¹
–7
–5
–3
–2
TC = 25°C
Single Pulse
10ms
100ms
–10⁰
–7
–5
DC
–3
–2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10² –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
–100
–80
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS =
–10V
–5V
–6V
–60
–8V
–4V
–40
Tc = 25°C
Pulse Test
–20
–3V
PD = 35W
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
VGS =
–10V
–4V
–40 _–8V
–6V
–30 –5V
PD = 35W
–20
–10
0
0
–3V
Tc = 25°C
Pulse Test
–0.4 –0.8 –1.2 –1.6 –2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999