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FX30KMJ-06 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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PRELIMINARY NSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
â10
Tch = 25°C
ID = â30A
â8
VDS =
â10V
â20V
â6
â40V
â4
â2
0
0
20 40 60 80 100
GATE CHARGE Qg (nC)
MITSUBISHI Pch POWER MOSFET
FX30KMJ-06
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
â50
VGS = 0V
Pulse Test
TC =
â40
125°C
75°C
â30
25°C
â20
â10
0
0 â0.4 â0.8 â1.2 â1.6 â2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7 VGS = â10V
ID = 1/2ID
5
4
Pulse Test
3
2
100
7
5
4
3
2
10â1
â50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
â4.0
VDS = â10V
ID = â1mA
â3.2
â2.4
â1.6
â0.8
0
â50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = â1mA
1.2
1.0
0.8
0.6
0.4
â50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
101
7
5
D = 1.0
3
0.5
2
0.2
100
7
5
3
2
10â1
7
5
3
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
0.1
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= tw
T
10â2
10â42 3
5 710â32 3
5 710â22 3
5 710â12 3
5 7 100 2 3
5 7 101 2 3
5 7 102
PULSE WIDTH tw (s)
Jan.1999
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