FX30KMJ-06 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
–5.0
–4.0
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
Tc = 25°C
Pulse Test
–3.0
–2.0
–1.0
ID =
–50A
–30A
–15A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–50
Tc = 25°C
VDS = –10V
–40
Pulse Test
–30
–20
–10
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
10⁴
f = 1MHZ
7
VGS = 0V
5
3
Ciss
2
10³
7
5
Coss
3
2
10²
Crss
7
5
3
2
–3
–5–7–10⁰ –2 –3
–5–7–10¹ –2 –3
–5–7–10² –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX30KMJ-06
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
Tc = 25°C
Pulse Test
80
VGS = –4V
60
–10V
40
20
0
–10^–1 –2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
5
4
TC =
75°C ^125°C
3
25°C
2
10¹
7
5
VDS = –10V
4
Pulse Test
3
2
10–⁰_{100 –2 –3 –4 –5 –7–101 –2 –3 –4–5 –7–102}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
td(off)
3
2
tf
10²
7
tr
5
3
2
10¹
7
5–7_–100
–2 –3
td(on)
Tch = 25°C
VGS = –10V
VDD = –30V
RGEN = RGS = 50Ω
–5 –7–10¹ –2 –3 –5 –7
DRAIN CURRENT ID (A)
Jan.1999