FX20ASJ-06 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
–10
Tch = 25°C
ID = –20A
–8
VDS =
–10V
–6
–20V
–40V
–4
–2
0
0
10 20 30 40 50
GATE CHARGE Qg (nC)
MITSUBISHI Pch POWER MOSFET
FX20ASJ-06
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
VGS = 0V
Pulse Test
–40
TC =
–30
125°C
75°C
–20
25°C
–10
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7 ^{VGS = –10V}
ID = 1/2ID
5
4
Pulse Test
3
2
10⁰
7
5
4
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–4.0
VDS = –10V
ID = –1mA
–3.2
–2.4
–1.6
–0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
10¹
7
5 D = 1.0
3 _0.5
2
0.2
10⁰
7
5
3
2
10^–1
7
5
3
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
0.1
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= ^tw
T
10^–2
10^–42 3
5 710^–32 3
5 710^–22 3
5 710^–12 3
5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10²
PULSE WIDTH tw (s)
Jan.1999