FX20ASJ-06 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–10
Tc = 25°C
Pulse Test
–8
–6
–4
–2
–10A
ID =
–40A
–20A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–50
Tc = 25°C
VDS = –10V
–40
Pulse Test
–30
–20
–10
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
3
2
Ciss
10³
Tch = 25°C
7
f = 1MHZ
5
VGS = 0V
4
3
Coss
2
10²
7
Crss
5
4
3
–3
–5–7–10⁰
–2 –3
–5–7–10¹
–2 –3
–5–7–10²
–2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX20ASJ-06
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
Tc = 25°C
Pulse Test
160
VGS = –4V
120
–10V
80
40
0
–10^–1 –2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
VDS = –10V
5
Pulse Test
4
3
2 ^{TC = 75°C 125°C}
25°C
10¹
7
5
4
3
2
10–⁰_{100 –2 –3 –4 –5 –7–101 –2 –3 –4–5 –7–102}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
td(off)
10²
tf
7
5
4
tr
3
2
td(on)
10¹
7
5
4
3
–5
–7 –10⁰
Tch = 25°C
VGS = –10V
VDD = –30V
RGEN = RGS = 50Ω
–2 –3 –4–5 –7 –10¹ –2 –3 –4–5
DRAIN CURRENT ID (A)
Jan.1999