FS3VS-18A Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
Tch = 25°C
ID = 3A
16
12
VDS = 250V
400V
600V
8
4
0
0
10 20 30 40 50
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS3VS-18A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
VGS = 0V
Pulse Test
8
TC = 125°C
6
75°C
25°C
4
2
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7
VGS = 10V
ID = 1/2ID
5
Pulse Test
3
2
10⁰
7
5
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
10¹
7
5
3
2
D = 1.0
10⁰
7 0.5
5
0.2
3
2 ^0.1
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10^–1
7
5
3
2
0.05
0.02
0.01
Single Pulse
10^–2
10^–42 3
5710^–32 3
5710^–22 3
5710^–12 3
5 7 10⁰
23
5710¹ 2 3
5 7 10²
PULSE WIDTH tw (s)
Feb.1999