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FS3VS-18A Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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MITSUBISHI Nch POWER MOSFET
FS3VS-18A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 900V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1.5A, VGS = 10V
ID = 1.5A, VGS = 10V
ID = 1.5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 1.5A, VGS = 10V,
RGEN = RGS = 50â¦
IS = 1.5A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ. Max.
900
â
â
V
±30
â
â
V
â
â
±10
µA
â
â
1
mA
2
3
4
V
â
3.08
4.00
â¦
â
4.62
6.00
V
2.1
3.5
â
S
â
770
â
pF
â
77
â
pF
â
13
â
pF
â
15
â
ns
â
15
â
ns
â
90
â
ns
â
25
â
ns
â
1.0
1.5
V
â
â
1.25 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
PD = 100W
VGS = 20V
10V
8
TC = 25°C
Pulse Test
6
5V
4
MAXIMUM SAFE OPERATING AREA
101
7
tw = 10ms
5
3
100ms
2
100
7
5
3
2
10â1
7
5
3
2
TC = 25°C
Single Pulse
1ms
10ms
100ms
DC
10â2100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 1@0V
2.0
5V
TC = 25°C
Pulse Test
1.6
4.5V
1.2
0.8
2
4V
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
0.4
4V
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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