FS10KMH-03 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
5.0
Tch = 25°C
ID = 10A
4.0
3.0
VDS = 10V
2.0
20V
25V
1.0
0
0
2
4
6
8
10
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS10KMH-03
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
VGS = 0V
Pulse Test
32
24
TC = 125°C
75°C
16
25°C
8
0
0
0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7 ^{VGS = 4V}
5
4
ID = 1/2ID
Pulse Test
3
2
10⁰
7
5
4
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
2.0
VDS = 10V
ID = 1mA
1.6
1.2
0.8
0.4
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10²
7
5
3
2
10^{1 D = 1.0}
7
5
0.5
3 0.2
2
10⁰
7
5
3
2
0.1
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= ^tw
T
10^–1
10^–42 3
5710^–32 3
5710^–22 3
5710^–12 3
5 7 10⁰
23
5 7 10¹
23
5 7 10²
PULSE WIDTH tw (s)
Feb.1999