FS10KMH-03 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS10KMH-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 4V
ID = 5A, VGS = 2.5V
ID = 5A, VGS = 4V
ID = 5A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 5A, VGS = 4V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 5A, dis/dt = –50A/µs
Limits
Min.
Typ. Max.
30
—
—
—
—
±0.1
—
—
0.1
0.6
0.9
1.2
—
68
92
—
88
141
—
0.34 0.46
—
12
—
—
540
—
—
160
—
—
55
—
—
12
—
—
35
—
—
45
—
—
40
—
—
1.0
1.5
—
—
8.3
—
35
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
20
16
12
8
4
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
5
3
2
tw = 10ms
10¹
7
5
100ms
3
2
1ms
10⁰
7
5
TC = 25°C
3
Single Pulse
2
10ms
DC
10^–1
7
5
23
5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10² 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
20
Tc = 25°C
Pulse Test
16
VGS = 5V
12
4V
3V
2.5V
PD = 15W
8
2V
4
1.5V
0
0
0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 5V 4V _{3V 2.5V}
8
2V
6
4
Tc = 25°C
Pulse Test
2
1.5V
0
0
0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999