FGC800A-130DS Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – HIGH POWER INVERTER USE PRESS PACK TYPE

MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FGC800A-130DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10⁴
7
5
3
2
10³
7
5
3
2
Tj=115°C
10²
7
Tj=25°C
5
3
2
10
012345678
ON-STATE VOLTAGE VTM (V)
Eon VS IT
2.5
Condition
VD=3000V, Tj=115°C
2.0
di/dt=1000A/µs
Cs=0.1µF, Rs=10Ω
With GU-D08
Max
1.5
1.0
Typ
0.5
0.0
0 100 200 300 400 500 600 700 800 9001000
TURN ON CURRENT IT (A)
Eoff VS IT
9
Condition
8 _{VD=3000V, VDM=VD+2.34∗IT}
7
Tj=115°C, With GU-D08
Cs=0.1µF, Rs=10Ω
6
Max
5
Typ
4
3
Turn-off and
Recovery test circuit
L(line)
2
L(load)
Rs
GCT2 Cs
VD
GCT1
Rs
1
Cs
GCT1:Turn-off test
GCT2:Recovery test
0
0 100 200 300 400 500 600 700 800 9001000
TURN OFF CURRENT IT (A)
QRR VS IT
2500
Condition
VR=3000V, Tj=115°C
2000 ^{di/dt=1000A/µs}
Cs=0.1µF, Rs=10Ω
Max
1500
1000
500
0
0
Typ
Turn-off and
Recovery test circuit
L(line)
L(load)
Rs
GCT2 Cs
VD
GCT1
Rs
Cs
GCT1:Turn-off test
GCT2:Recovery test
100 200 300 400 500 600 700 800 9001000
ON-STATE CURRENT IT (A)
Erec VS IT
8
Condition
7 VR=3000V, Tj=115°C
di/dt=1000A/µs
6 Cs=0.1µF, Rs=10Ω
Max
5
4
Typ
3
Turn-off and
Recovery test circuit
2
L(line)
Rs
L(load)
GCT2 Cs
VD
1
GCT1
Rs
Cs
GCT1:Turn-off test
GCT2:Recovery test
0
0 100 200 300 400 500 600 700 800 9001000
ON-STATE CURRENT IT (A)
0.035
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
0.03
0.025
0.02
0.015
0.01
0.005
0
0.001 0.01
0.1
1
10
TIME (S)
Mar. 2001