FGC800A-130DS Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – HIGH POWER INVERTER USE PRESS PACK TYPE

MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FGC800A-130DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
VTM
IRRM
IDRM
IGRM
dv/dt
tgt
td
Eon
ts
Eoff
QRR
Erec
IGT
VGT
Rth(j-f)
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Delay time
Turn-on switching energy
Storage time
Turn-off switching energy
Reverse recovery charge
Reverse recovery energy
Gate trigger current
Gate trigger voltage
Thermal resistance
IT = 800A, Tj = 115°C
VRM = 6500V, Tj = 115°C
VDM = 6500V, VGK = –2V, Tj = 115°C
VRG = 21V, Tj = 115°C
VD = 3000V, VGK = –2V, Tj = 115°C
(Expo. wave)
(see Fig. 4)
IT = 800A, VD = 3000V, di/dt = 1000A/µs, Tj = 115°C
CS= 0.1µF, RS = 10Ω
With GU-D08
(see Fig. 1, 2)
IT = 800A, VDM = 3/4 VDRM, VD = 3000V
CS= 0.1µF, RS= 10Ω, VRG = 20V, Tj = 115°C
With GU-D08
(see Fig. 1, 5)
VR = 3000V, IT = 800A, di/dt = 1000A/µs
CS= 0.1µF, RS = 10Ω, Tj = 115°C
(see Fig. 5, 6)
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
Junction to fin
Min
—
—
—
—
3000
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
6.8
150
100
50
—
5.0
1.0
1.6
3.0
6.0
1650
5.0
0.5
1.5
0.025
Unit
V
mA
mA
mA
V/µs
µs
µs
J/P
µs
J/P
µC
J/P
A
V
°C/W
Mar. 2001