FG4000GX-90DA Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
80
VD = 3400V
70 ^{VDM = 4500V}
diGQ/dt = –50A/µs
60 ^{VRG = 17V}
CS = 4.0µF
50
LS = 0.2µH
Tj = 125°C
40
tgq
30
20
ts
10
0
500 1000 1500 2000 2500 3000 3500 4000 4500
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
1600
VD = 3400V
1400 ^{VDM = 4500V}
diGQ/dt = –50A/µs
1200 ^{VRG = 17V}
CS = 4.0µF
1000
LS = 0.2µH
Tj = 125°C
800
600
400
200
0
500 1000 1500 2000 2500 3000 3500 4000 4500
TURN OFF CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
8
VD = 2800V
7
IGM = 25A
diG/dt = 20A/µs
6
CS = 4.0µF
RS = 5Ω
5 ^{Tj = 125°C}
diT/dt = 500A /µs
4
300A /µs
3
2
100A /µs
1
0
0 1000 2000 3000 4000 5000
TURN ON CURRENT (A)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000GX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
40
tgq
30
20 VD = 3400V
ts
VDM = 3375V
IT = 4000A
10 ^{VRG = 17V}
CS = 4.0µF
LS = 0.2µH
Tj = 125°C
0
20 30 40 50 60 70
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
1100
1000
900
800
700
600
500
400
300
200
100
0
0
VD = 3400V
VDM = 4500V
IT = 4000A
VRG = 17V
CS = 4.0µF
LS = 0.2µH
Tj = 125°C
10 20 30 40 50 60 70 80
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
12
CS = 4.0µF
11
10
9
CS = 2.5µF
8
7
6
VD = 2800V
5
VDM = 4500V
4
diGQ/dt = –50A/µs
VRG = 17V
3
LS = 0.2µH
Tj = 125°C
2
0 1000 2000 3000 4000 5000
TURN OFF CURRENT (A)
Aug.1998