FG4000GX-90DA Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
5000
4500
4000
3500
180°
120°
90°
60°
3000
2500
θ = 30°
2000
1500
1000
500
0
0
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
400 800 1200 1600 2000
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
10000
9000
8000
7000
6000
5000
4000
3000
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
270° DC
60° ^{90°120° 180°}
θ = 30°
2000
1000
0
0 400 800 1200 1600 2000
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(MAXIMUM)
10
9
VD = 24V
RL = 0.1Ω
8
DC METHOD
7
6
5
4
3
2
1
0
–40 0
40 80 120 160
JUNCTION TEMPERATURE (°C)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000GX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
140
130
θ
120
360°
110
RESISTIVE,
100
INDUCTIVE
LOAD
90
80
70
60
θ = 30° 60° 90° 120° 180°
50
40
0 400 800 1200 1600 2000
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
150
140
θ
130
360°
120
RESISTIVE,
110
INDUCTIVE
LOAD
100
90
80
70
60
θ = 30° 60° 90° 120° 180°
270° DC
50
0 400 800 1200 1600 2000
AVERAGE ON-STATE CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
5.0
4.0 ^{IT = 4000A}
tgt
VD = 3400V
diT/dt = 500A/µs
diG/dt = 20A/µs
3.0 _{Tj = 125°C}
2.0
td
1.0
0
10 20 30 40 50 60
TURN ON GATE CURRENT (A)
Aug.1998