FG4000EX-50DA Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
30
tgq
25
ts
20
15
VD = 1250V
VDM = 1875V
diGQ/dt = –50A/µs
10
VRG = 17V
CS = 6.0µF
LS = 0.2µH
Tj = 125°C
5
0 1000 2000 3000 4000 5000
TURN OFF CURRENT (A)
1200
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
1000
800
600
400
200
0
1000
2000
VD = 1250V
VDM = 1875V
diGQ/dt = –50A/µs
VRG = 17V
CS = 6.0µF
LS = 0.2µH
Tj = 125°C
3000 4000 5000
TURN OFF CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
2.0
diT/dt = 500A /µs
300A /µs
1.5
100A /µs
1.0
0.5
0
0
1000
2000
VD = 1250V
IGM = 50A
diG/dt = 30A/µs
CS = 6.0µF
RS = 5Ω
Tj = 125°C
3000 4000 5000
TURN ON CURRENT (A)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000EX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
40
30
tgq
20 VD = 1250V
VDM = 1875V
ts
IT = 4000A
10 ^{VRG = 17V}
CS = 6.0µF
LS = 0.2µH
Tj = 125°C
0
0 10 20 30 40 50 60 70 80 90 100
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
1400
1200
1000
800
600
400
0
VD = 1250V
VDM = 1875V
IT = 4000A
VRG = 17V
CS = 6.0µF
LS = 0.2µH
Tj = 125°C
10 20 30 40 50 60 70 80 90 100
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
10
9
8
7
6
5
4
VD = 1250V
VDM = 1875V
3
diGQ/dt = –50A/µs
2
VRG = 17V
CS = 6.0µF
1
LS = 0.2µH
Tj = 125°C
0
0 1000 2000 3000 4000 5000
TURN OFF CURRENT (A)
Aug.1998