FG4000EX-50DA Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
4800
4200
θ
180°
120°
90°
3600 _360°
60°
RESISTIVE,
3000 INDUCTIVE
LOAD
θ = 30°
2400
1800
1200
600
0
0 200 400 600 800 1000 1200 1400 1600
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
8000
7000
DC
6000
5000
4000
270°
180°
120°
90°
60°
3000 ^{θ = 30°}
θ
2000
360°
1000
RESISTIVE,
INDUCTIVE
LOAD
0
0 500 1000 1500 2000 2500 3000 3500 4000
AVERAGE ON-STATE CURRENT (A)
10000
9000
8000
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
VD = 5 ~ 20V
IT = 25 ~ 200A
HALF SINE WAVE
7000
6000
5000
4000
3000
2000
–60 –20 20
60 100 140
JUNCTION TEMPERATURE (°C)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000EX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
130
120
θ
110
360°
RESISTIVE,
100
INDUCTIVE
LOAD
90
80
70
θ = 30° 60° 90° 120° 180°
60
50
0 200 400 600 800 1000 1200 1400 1600
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
130
120
θ
110
360°
RESISTIVE,
100
INDUCTIVE
LOAD
90
80
70
60 ^{θ= 30° 90° 180°}
60° 120° 270° DC
50
0 500 1000 1500 2000 2500 3000 3500 4000
AVERAGE ON-STATE CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
10.0
9.0
IT = 4000A
VD = 1250V
8.0
diT/dt = 500A/µs
diG/dt = 20A/µs
7.0
Tj = 125°C
6.0
5.0
tgt
4.0
3.0
td
2.0
1.0
0
0 10 20 30 40 50 60 70 80 90 100
TURN ON GATE CURRENT (A)
Aug.1998