FG3000GX-90DA Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
50
VD = 3400V
VDM = 4500V
diGQ/dt = –40A/µs
40 _{VRG = 17V}
CS = 3.0µF
LS = 0.25µH
30 Tj = 125°C
tgq
20
ts
10
0
0 500 1000 1500 2000 2500 3000 3500
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
800
700
600
500
400
300
200
100
0
0
VD = 3400V
VDM = 4500V
diGQ/dt = –40A/µs
VRG = 17V
CS = 3.0µF
LS = 0.25µH
Tj = 125°C
500 1000 1500 2000 2500 3000 3500
TURN OFF CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
8
VD = 2800V
7 ^{IGM = 25A}
diG/dt = 20A/µs
6
CS = 3.0µF
RS = 5Ω
5 ^{Tj = 125°C}
diT/dt = 500A /µs
4
3
300A /µs
2
100A /µs
1
0
0 500 1000 1500 2000 2500 3000 3500 4000
TURN ON CURRENT (A)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG3000GX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
40
tgq
30
ts
20 VD = 3400V
VDM = 4500V
IT = 3000A
10 ^{VRG = 17V}
CS = 3.0µF
LS = 0.25µH
Tj = 125°C
0
10 20 30 40 50 60
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
1200
1100
1000
900
800
700
600
VD = 3400V
VDM = 4500V
500
IT = 3000A
400
VRG = 17V
CS = 3.0µF
300
LS = 0.25µH
Tj = 125°C
200
10 20 30 40 50 60
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
12
11
10
9
8
7
6
VD = 2800V
5
VDM = 4500V
diGQ/dt = –40A/µs
4
VRG = 17V
CS = 3.0µF
3
LS = 0.25µH
2
Tj = 125°C
0 500 1000 1500 2000 2500 3000 3500 4000
TURN OFF CURRENT (A)
Aug.1998