FG3000GX-90DA Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
4000
3500
θ
3000
2500
2000
360°
RESISTIVE,
INDUCTIVE
LOAD
θ = 30°
180°
120°
90°
60°
1500
1000
500
0
0 200 400 600 800 1000
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
5000
DC
4000
270°
180°
3000
θ = 30°
120°
90°
60°
2000
θ
1000
0
0
360°
RESISTIVE,
INDUCTIVE
LOAD
200 400 600 800 1000 1200 1400 1600
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER CURRENT, GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
(MAXIMUM)
10
9
VD = 24V
RL = 0.1Ω
8
DC METHOD
7
6
5
IGT
4
3
VGT
2
1
0
–40 0
40 80 120 160
JUNCTION TEMPERATURE (°C)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG3000GX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
140
130
120
θ
110
360°
RESISTIVE,
100
INDUCTIVE
LOAD
90
80
70
60
θ = 30° 60° 90° 120° 180°
50
40
0 200 400 600 800 1000
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
130
120
θ
110
360°
RESISTIVE,
100
INDUCTIVE
LOAD
90
80
70
60
60°
120° 270°
θ = 30°
90° 180°
DC
50
0 200 400 600 800 1000 1200 1400 1600
AVERAGE ON-STATE CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
10
IT = 3000A
VD = 3400V
diT/dt = 500A /µs
8
diG/dt = 20A /µs
Tj = 125°C
6
tgt
4
2
td
0
0 10 20 30 40 50 60
TURN ON GATE CURRENT (A)
Aug.1998