CM900HB-90H Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Single IGBTMOD™ HVIGBT 900 Amperes/4500 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM900HB-90H
Single IGBTMOD™ HVIGBT
900 Amperes/4500 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
6
V_GE =T1_j 5=V25°C
5
T_j = 125°C
4
3
2
1
0
0
500
1000 1500
COLLECTOR CURRENT, I_C, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
1.2
Single Pulse
1.0
T_C = 25°C
Per Unit Base = R_th(j-c) = 0.020 K/W
2000
0.8
0.6
0.4
0.2
0
10^-3
10^-2
10^-1
10⁰
TIME, (s)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
V_CC = 2250V
V_GE = ±15V
R_G = 10Ω
L_S = 180nH
T_j = 125°C
Inductive Load Integrated
Over Range of 10%
IGBT Drive Conditions
400
800 1200
EMITTER CURRENT, I_E, (AMPERES)
1600
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
6
T_j = 25°C
5
T_j = 125°C
4
3
2
1
0
0
500 1000 1500 2000
EMITTER CURRENT, I_E, (AMPERES)
HALF-BRIDGE TURN-ON SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
7
V_CC = 2250V
6 ^VGE ^{= ±15V}
R_G = 10Ω
5
L_S = 180nH
T_j = 125°C
Inductive Load Integrated
4 Over Range Of 10%
3
2
1
0
0
2500
400
800 1200 1600
COLLECTOR CURRENT, I_C, (AMPERES)
TURN-ON SWITCHING
SAFE OPERATING AREA (RBSOA)
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
1.2
Single Pulse
1.0
T_C = 25°C
Per Unit Base = R_th(j-c) = 0.010 K/W
0.8
0.6
0.4
0.2
0
10^-3
10^-2
10^-1
10⁰
TIME, (s)
HALF-BRIDGE TURN-OFF SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
5
V_CC = 2250V
V_GE = ±15V
4 ^RG ^{= 10Ω}
L_S = 180nH
T_j = 125°C
3
Inductive Load Integrated
Over Range of 10%
2
1
0
0
2000
400
800 1200 1600
COLLECTOR CURRENT, I_C, (AMPERES)
DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(TYPICAL)
2000
1500
1000
V_CC = 3000V
V_GE = ±15V
500 R_G = 10Ω
L_S = 100nH
T_j = 125°C
0
0 1000 2000
3000
4000
5000
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
1500
1000
500
0
0
1000 2000 3000 4000
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
4