CM900HB-90H Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Single IGBTMOD™ HVIGBT 900 Amperes/4500 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM900HB-90H
Single IGBTMOD™ HVIGBT
900 Amperes/4500 Volts
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
C_ies
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
C_oes
C_res
t_d(on)
V_GE = 0V, V_CE = 10V
V_CC = 2250V, I_C = 900A,
Load
Rise Time
t_r
V_GE1 = V_GE2 = 15V,
Switching
Turn-off Delay Time
t_d(off)
R_G = 10Ω
Times
Fall Time
t_f
Resistive Load Switching Operation
Diode Reverse Recovery Time**
t_rr
I_E = 900A, di_E/dt = -1800A/µs
Diode Reverse Recovery Charge**
Q_rr
I_E = 900A, di_E/dt = -1800A/µs
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. Units
–
162
– nF
–
12.0
– nF
–
3.6
– nF
–
–
2.4 µs
–
–
2.4 µs
–
–
6.0 µs
–
–
1.2 µs
–
–
1.8 µs
–
360*
–
µC
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Case to Fin
R_th(j-c) Q
R_th(j-c) D
R_th(c-f)
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
–
–
0.010 K/W
–
–
0.020 K/W
–
0.007
–
K/W
3