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| CM75TU-12F Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-12F
Trench Gate Design Six IGBTMODâ¢
75 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
150
11
Tj = 25oC
15
120
VGE = 20V
10
9.5
9
90
60
8.5
30
8
7.5
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
102
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3
VGE = 15V
Tj = 25°C
Tj = 125°C
2
1
0
0 30 60 90 120 150
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
102
VGE = 0V
Cies
101
101
100
0
1.0
2.0
3.0
4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
102
trr
Irr
101
101
100
100
VCC = 300V
VGE = ±15V
RG = 8.3 â¦
Tj = 25°C
Inductive Load 100
101
102
EMITTER CURRENT, IE, (AMPERES)
100
Coes
Cres
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 75A
16
VCC = 200V
VCC = 300V
12
8
4
0
0 100 200 300 400 500 600 700
GATE CHARGE, QG, (nC)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 150A
2
IC = 75A
1
IC = 30A
0
0
103
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
102
tf
td(on)
101
100
100
tr
VCC = 300V
VGE = ±15V
RG = 8.3 â¦
Tj = 125°C
Inductive Load
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10110-3
10-2
10-1
100
101
Per Unit Base
Rth(j-c) = 0.43°C/W (IGBT)
100
Rth(j-c) = 0.9°C/W (FWDi)
Single Pulse
TC = 25°C
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
4
4
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