CM75TU-12F Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM75TU-12F
Trench Gate Design Six IGBTMOD™
75 Amperes/600 Volts
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
C_ies
C_oes
C_res
t_d(on)
t_r
t_d(off)
–
V_CE = 10V, V_GE = 0V
–
–
V_CC = 300V, I_C = 75A,
–
V_GE1 = V_GE2 = 15V,
–
R_G = 8.3⍀,
–
Times
Fall Time
t_f
Inductive Load
–
Diode Reverse Recovery Time**
t_rr
Diode Reverse Recovery Charge**
Q_rr
Switching Operation
–
I_E = 75A
–
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT 1/6 Module, T_c Reference –
Point per Outline Drawing
Thermal Resistance, Junction to Case
R_th(j-c)D
Per FWDi 1/6 Module, T_c Reference –
Point per Outline Drawing
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R_th(j-c)'Q
Per IGBT 1/6 Module,
T_c Reference Point Under Chip
R_th(c-f)
Per Module, Thermal Grease Applied
–
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
Max. Units
–
20
nf
–
1.4
nf
–
0.75
nf
–
100
ns
–
80
ns
–
300
ns
–
250
ns
–
150
ns
1.4
–
µC
Typ.
Max. Units
0.43 °C/W
–
0.9 °C/W
0.29
°C/W
0.018 –
°C/W
3