CM75RX-34SA Datasheet, PDF (4/13 Pages) Powerex Power Semiconductors – Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts

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CM75RX-34SA
Six IGBT + Brake NX-Series Module
75 Amperes/1700 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Brake Part IGBT/ClampDi
Characteristics
Symbol
Test Conditions
Collector-Emitter Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate-Emitter Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 5mA, V_CE = 10V
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 50A, V_GE = 15V, T_j = 25°C^*6
(Terminal)
I_C = 50A, V_GE = 15V, T_j = 125°C^*6
I_C = 50A, V_GE = 15V, T_j = 150°C^*6
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 50A, V_GE = 15V, T_j = 25°C^*6
(Chip)
I_C = 50A, V_GE = 15V, T_j = 125°C^*6
I_C = 50A, V_GE = 15V, T_j = 150°C^*6
Input Capacitance
C_ies
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
Reverse Transfer Capacitance
C_res
Gate Charge
Q_G
V_CC = 1000V, I_C = 50A, V_GE = 15V
Turn-on Delay Time
t_d(on)
Rise Time
t_r
V_CC = 1000V, I_C = 50A, V_GE = ±15V,
Turn-off Delay Time
t_d(off)
R_G = 13Ω, Inductive Load
Fall Time
t_f
Repetitive Peak Reverse Current
I_RRM
V_R = V_RRM, V_GE = 0V
Forward Voltage
V_F
I_F = 50A, V_GE = 0V, T_j = 25°C^*6
(Terminal)
I_F = 50A, V_GE = 0V, T_j = 125°C^*6
I_F = 50A, V_GE = 0V, T_j = 150°C^*6
Forward Voltage
V_F
I_F = 50A, V_GE = 0V, T_j = 25°C^*6
(Chip)
I_F = 50A, V_GE = 0V, T_j = 125°C^*6
I_F = 50A, V_GE = 0V, T_j = 150°C^*6
Reverse Recovery Time
t_rr^*1
V_CC = 1000V, I_F = 50A, V_GE = ±15V
Reverse Recovery Charge
Q_rr^*1
R_G = 13Ω, Inductive Load
Turn-on Switching Energy per Pulse
E_on
V_CC = 1000V, I_C = I_F = 50A,
Turn-off Switching Energy per Pulse
E_off
V_GE = ±15V, R_G = 13Ω,
Reverse Recovery Energy per Pulse
E_rr^*1
T_j = 150°C, Inductive Load
Internal Gate Resistance
r_g
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
39.6
31.2
(Tr/UN, VN) _28.8
(Di/UP, VP, WP)
20.6
0
Min.
Typ. Max. Units
—
—
1.0
mA
—
—
0.5
µA
5.4
6.0
6.6
Volts
—
2.0
2.5
Volts
—
2.2
—
Volts
—
2.25
—
Volts
—
1.9
2.4
Volts
—
2.1
—
Volts
—
2.15
—
Volts
—
—
8.8
nF
—
—
0.35
nF
—
—
0.09
nF
—
276
—
nC
—
—
200
ns
—
—
100
ns
—
—
700
ns
—
—
600
ns
—
—
1
mA
—
4.1
5.3
Volts
—
2.9
—
Volts
—
2.7
—
Volts
—
4.0
5.2
Volts
—
2.8
—
Volts
—
2.6
—
Volts
—
—
200
ns
—
1.3
—
µC
—
9.7
—
mJ
—
11.2
—
mJ
—
9.8
—
mJ
—
0
—
Ω
LABEL SIDE
Tr
UP
Di
UP
Tr
UN
Di
UN
Tr
VP
Tr
Di
VP
VN
Di
VN
Tr
WP
Tr
WN
Th
Di
Br
Di
WP Di
WN Tr
Br
40.7
37.0
34.0
26.2
22.0
0
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: ClampDi
Th: NTC Thermistor
4
03/13 Rev. 0