CM75RX-34SA Datasheet, PDF (2/13 Pages) Powerex Power Semiconductors – Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts

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CM75RX-34SA
Six IGBT + Brake NX-Series Module
75 Amperes/1700 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_C = 125°C)^*2,*4
Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Emitter Current^*2,*4
Emitter Current (Pulse, Repetitive)^*3
Maximum Junction Temperature
Brake Part IGBT/ClampDi
Characteristics
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_C = 125°C)^*2,*4
Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Repetitive Peak Reverse Voltage (V_GE = 0V)
Forward Current^*2,*4
Forward Current (Pulse, Repetitive)^*3
Maximum Junction Temperature
Module
Characteristics
Maximum Case Temperature^*2
Operating Junction Temperature
Storage Temperature
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (T_j)
does not exceed T_j(max) rating.
*4 Junction temperature (T_j) should not increase beyond maximum junction
temperature (T_j(max)) rating.
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
I_E^*1
I_ERM^*1
T_j(max)
Rating
1700
±20
75
150
830
75
150
175
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
°C
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
V_RRM
I_F^*1
I_FRM^*1
T_j(max)
Rating
1700
±20
50
100
600
1700
50
100
175
Units
Volts
Volts
Amperes
Amperes
Watts
Volts
Amperes
Amperes
°C
Symbol
T_C(max)
T_j(op)
T_stg
V_ISO
Rating
125
-40 to +150
-40 to +125
4000
Units
°C
°C
°C
Volts
LABEL SIDE
39.6
31.2
(Tr/UN, VN) _28.8
(Di/UP, VP, WP)
20.6
0
Tr
UP
Di
UP
Tr
UN
Di
UN
Tr
VP
Tr
Di
VP
VN
Di
VN
Tr
WP
Tr
WN
Th
Di
Br
Di
WP Di
WN Tr
Br
40.7
37.0
34.0
26.2
22.0
0
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: ClampDi
Th: NTC Thermistor
2
03/13 Rev. 0