CM600DXL-24S Datasheet, PDF (4/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM600DXL-24S
Dual IGBT NX-Series Module
600 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
R₂₅
∆R/R
B_(25/50)
P₂₅
Test Conditions
T_C = 25°C^*2
T_C = 100°C^*2, R₁₀₀ = 493Ω
Approximate by Equation^*6
T_C = 25°C^*4
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case^*2
Thermal Resistance, Junction to Case^*2
Contact Thermal Resistance,
Case to Heatsink^*2
R_th(j-c)Q
R_th(j-c)D
R_th(c-f)
Per Inverter IGBT
Per Inverter FWDi
Thermal Grease Applied,
Per 1 Module^*7
Mechanical Characteristics
Mounting Torque
Mounting Torque
Creepage Distance
Clearance
Weight
Flatness of Baseplate
M_t
Main Terminals, M6 Screw
M_s
Mounting to Heatsink, M5 Screw
d_s
Terminal to Terminal
Terminal to Baseplate
d_a
Terminal to Terminal
Terminal to Baseplate
m
e_c
On Centerline X, Y^*8
Recommended Operating Conditons, T_a = 25°C
DC Supply Voltage
V_CC
Gate-Emitter Drive Voltage
V_GE(on)
Applied Across C1-E2 Terminals
Applied Across
G1-Es1/G2-Es2 Terminals
External Gate Resistance
R_G
Per Switch
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
0
The heatsink thermal resistance should be measured just under the chips.
*6
B_(25/50) = In(RR₅₂₀₅)/(T₂¹₅
1
– _T50
)
20.9
32.6
R₂₅; Resistance at Absolute Temperature T₂₅ [K]; T₂₅ = 25 [°C] + 273.15 = 298.15 [K]
R₅₀; Resistance at Absolute Temperature T₅₀ [K]; T₅₀ = 50 [°C] + 273.15 = 323.15 [K]
46.0
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
72.6
Y
86.0
Min.
Typ.
Max. Units
4.85 5.00 5.15
kΩ
-7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
—
—
33
K/kW
—
—
63
K/kW
—
7
—
K/kW
31
35
40
in-lb
22
27
31
in-lb
13.2
—
—
mm
15.3
—
—
mm
13.2
—
—
mm
14.8
—
—
mm
—
690
— Grams
±0
—
±100
µm
—
600
850
Volts
13.5 15.0 16.5 Volts
0
—
6.8
Ω
98.6 81.8 57.6
27.2
0
0
Th
Tr1
Tr1
Tr1
Di1
Di1
Di1
26.4
40.0
Tr2
Tr2
Tr2
Di2
Di2
Di2
72.2
85.8
X
MOUNTING SIDE
MOUNTING SIDE
LABEL SIDE
– : CONCAVE
+ : CONVEX
LABEL SIDE
93.9
0
53.2
22.9
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
4
05/13 Rev. 6