CM600DXL-24S Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM600DXL-24S
Dual IGBT NX-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_C = 119°C)^*2,*4
Collector Current (Pulse)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Emitter Current (T_C = 25°C)^*2
Emitter Current (Pulse)^*3
Module
Characteristics
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
Maximum Junction Temperature, Instantaneous Event (Overload)
Maximum Case Temperature^*4
Operating Junction Temperature, Continuous Operation (Under Switching)
Storage Temperature
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (T_j)
does not exceed T_j(max) rating.
*4 Junction temperature (T_j) should not increase beyond maximum junction
temperature (T_j(max)) rating.
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
I_E^*1
I_ERM^*1
Rating
1200
±20
600
1200
4545
600
1200
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
Symbol
Rating
V_ISO
T_j(max)
T_C(max)
T_j(op)
T_stg
2500
175
125
-40 to +150
-40 to +125
98.6 81.8 57.6
27.2
0
0
20.9
32.6
46.0
Th
Tr1
Tr1
Tr1
Di1
Di1
Di1
72.6
86.0
Tr2
Tr2
Tr2
Di2
Di2
Di2
Units
Volts
°C
°C
°C
°C
0
26.4
40.0
72.2
85.8
LABEL SIDE
93.9
0
53.2
22.9
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
2
05/13 Rev. 6