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| CM50DU-24F Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Trench Gate Design Dual IGBTMOD™ 50 Amperes/1200 Volts | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50DU-24F
Trench Gate Design Dual IGBTMODâ¢
50 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
100
11
Tj = 25oC
15
VGE = 20V
80
10 9.5
9
60
40
8.5
20
8
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3
VGE = 15V
Tj = 25°C
Tj = 125°C
2
1
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
Tj = 25°C
101
100
0
1.0
2.0
3.0
4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
102
trr
Irr
101
101
VCC = 600V
VGE = ±15V
RG = 6.3 â¦
Tj = 25°C
Inductive Load
100
100
101
EMITTER CURRENT, IE, (AMPERES)
100
102
0
0 20 40 60 80 100
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
102
Cies
101
100
VGE = 0V
10-1
10-1
100
Coes
Cres
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 50A
16
VCC = 400V
12
VCC = 600V
8
4
0
0
200
400
600
800
GATE CHARGE, QG, (nC)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 100A
IC = 50A
2 IC = 20A
1
0
0 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
VCC = 600V
VGE = ±15V
RG = 6.3 â¦
Tj = 125°C
102 Inductive Load
tf
td(off)
td(on)
tr
101
100
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10110-3
10-2
10-1
100
101
Per Unit Base
Rth(j-c) = 0.39°C/W (IGBT)
100
Rth(j-c) = 0.7°C/W (FWDi)
Single Pulse
TC = 25°C
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
4
4
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