CM50DU-24F Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – Trench Gate Design Dual IGBTMOD™ 50 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM50DU-24F
Trench Gate Design
Dual IGBTMOD™
50 Amperes/1200 Volts
P - NUTS (3 PLACES)
TC MEASURING
POINT
A
N
D
C2E1
E2
C1
B
M
K
K
J
Q (2 PLACES)
E
F
G
H
F
R
C
L
G2
E2
RTC
C2E1
E2
C1
RTC
E1
G1
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A
3.70
94.0
B
1.89
48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D
3.15±0.01
80.0±0.25
E
0.43
11.0
F
0.16
4.0
G
0.71
18.0
H
0.02
0.5
Dimensions
J
K
L
M
N
P
Q
R
Inches
0.53
0.91
1.13
0.67
0.28
M5
0.26 Dia.
0.16
Millimeters
13.5
23.0
28.7
17.0
7.0
M5
6.5 Dia.
4.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V_CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM50DU-24Fis a
1200V (V_CES), 50 Ampere Dual
IGBTMOD™ Power Module.
Current Rating
V_CES
Type
Amperes
Volts (x 50)
CM
50
24
1