CM200EXS-24S Datasheet, PDF (4/9 Pages) Powerex Power Semiconductors – Chopper IGBT NX-Series Module 200 Amperes/1200 Volts

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CM200EXS-24S
Chopper IGBT NX-Series Module
200 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
R₂₅
∆R/R
B_(25/50)
P₂₅
Test Conditions
T_C = 25°C^*2
T_C = 100°C, R₁₀₀ = 493Ω
Approximate by Equation^*8
T_C = 25°C^*2
Min.
Typ.
Max. Units
4.85 5.00 5.15
kΩ
-7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case^*2
Thermal Resistance, Junction to Case^*2
Contact Thermal Resistance,
Case to Heatsink^*2
R_th(j-c)Q
R_th(j-c)D
R_th(c-f)
Per IGBT
Per Clamp Diode
Thermal Grease Applied
(Per 1 Module)^*7
—
—
0.10
K/W
—
—
0.19
K/W
—
25
—
K/kW
Mechanical Characteristics
Mounting Torque
Creepage Distance
Clearance
Weight
Flatness of Baseplate
M_t
Main Terminals, M5 Screw
22
M_s
Mounting to Heatsink, M5 Screw
22
d_s
Terminal to Terminal
20
Terminal to Baseplate
17
d_a
Terminal to Terminal
12
Terminal to Baseplate
10
m
—
e_c
On Centerline X, Y^*5
-100
Recommended Operating Conditons, T_a = 25°C
(DC) Supply Voltage
V_CC
Gate-Emitter Drive Voltage
V_GE(on)
External Gate Resistance
R_G
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8
B_(25/50)
=
In( ^R25)/( ¹
R₅₀ T₂₅
1
–
T₅₀
)
R₂₅; Resistance at Absolute Temperature T₂₅ [K]; T₂₅ = 25 [°C] + 273.15 = 298.15 [K]
R₅₀; Resistance at Absolute Temperature T₅₀ [K]; T₅₀ = 50 [°C] + 273.15 = 323.15 [K]
Applied Across P-N
Applied Across G-E
51.1
Th
40.4
Tr
18.9
Di
—
13.5
0
Y
X
MOUNTING
SIDE
0
LABEL SIDE
Each mark points to the center position of each chip.
Tr: IGBT Di: Clamp Diode Th: NTC Thermistor
27
27
—
—
—
—
210
—
600
15.0
—
31
31
—
—
—
—
—
+100
in-lb
in-lb
mm
mm
mm
mm
Grams
µm
850
Volts
16.5 Volts
30
Ω
MOUNTING SIDE
MOUNTING SIDE
– : CONCAVE
+ : CONVEX
4
07/12 Rev. 0